Structure-Designable Formation-Method of Super Low-k SiOC Film (k=2.2) by Neutral-Beam-Enhanced-CVD

Ar neutral beam enhanced chemical vapor deposition can control the dielectric constant and film modulus of low-k SiOC deposited on Si substrates precisely because it avoids precursor dissociation due to electron collisions and UV photons in plasma. Optimizing the ratio between Si-O and Si-(CH
3
)
x
as well as the proportions of linear, network, and cage Si-O structures by changing the precursor, we obtained a k of 2.2 and a reasonable modulus by using either dimethyl diethoxy silane or dimethyl dimethoxy silane as a precursor.