Incremental FRESURF LDMOSFET structure for enhanced voltage blocking capability on a 0.13μm, SOI based technology

In this paper, a novel structure based on the Floating RESURF LDMOSFET is proposed for enhanced off-state blocking capability. The new structure facilitates the implementation of FRESURF concept in thicker epi technologies for higher voltage tiers. An additional floating island is introduced, sandwiched between the standard drift region and heavily doped buried layer, which makes the Incremental FRESURF action feasible. Best case BV
_DSS
of 130V with R
_DS,ON
of 1.6mω-cm
²
has been experimentally realized on a 0.13μm, SOI based smart power technology which is a significant improvement as compared to other state of the art integrated high voltage technologies