Symmetrical PolyMUMPs-Based Piezoresistive Microcantilever Sensors With On-Chip Temperature Compensation for Microfluidics Applications

Microelectromechanical systems (MEMS)-based cantilever beam sensors for microfluidics applications with on-chip temperature sensors for temperature drift compensation were developed. The stress induced on gold surface with polysilicon piezoresistive sensing is demonstrated. In principle, adsorption of biochemical species on a functionalized surface of the microfabricated cantilever will cause surface stress and, consequently, cantilever bending. The sensing mechanism relies on the piezoresistive properties of the doped polysilicon wire encapsulated in the beam. The beam is constructed through multiusers MEMS Process (PolyMUMPs) foundry with postprocessing silicon etching. Bending analysis is performed so that the beam tip deflection can be predicted. The piezoresistor designs on the beams were varied, within certain constraints, so that the sensitivity of the sensing technique could be measured by external read-out circuit. The mass detection of 0.0058-0.0110 g is measured by the beam resistor series as a balanced Wheatstone bridge configuration. The voltage output of the bridge is directly proportional to the amount of bending in the MEMS cantilever. The temperature dependency and sensor performance have been characterized in experiments. Compensation by resisters on the substrate significantly reduces the temperature dependence.