Negative Photoconductivity of Amorphous Sb2Se3 and Sb2Se3:Sn Films

The photoconductivity spectra of amorphous Sb
₂
Se
₃
and Sb
₂
Se
₃
.Sn films in the photon energy range 1.0 + 2.5 eV have been investigated. The band connected with the presence of the defect states with the maximum located at 1.46 eV was revealed in the photoconductivity spectra. The intensity of this band increases in the samples with tin impurity. The transient photocurrent in the interval of times from 0.2 to 20 s is investigated also. The experimental data are discussed in framework of the model of the charged defects and non-equilibrium dielectric polarization in amorphous semiconductors.