A High Speed 1mb Eprom with Ti Silicided Gate

A high density and high speed 1Mb EPROM has been developed by utilizing both the advanced 1.0 μm minimum design rule technology and the Ti silicidation technology. The sheet resistance has been reduced to about 2Ω/□ by the Ti silicidation technology without degrading the programming, erase and retention characteristics. The low sheet resistance word line and the size reduction have been combined to achieve the fast access time of 100ns.