Tungsten Photochemical Vapor Deposition for VLSI Application and its Reaction Mechanism

Tungsten chemical vapor deposition from WF
₆
gas is a promising technology for future VLSI metallization. This method is characterized by its selectivity that the W film is deposited only on Si surface but not on SiO2 under special deposition conditions. Key factors for the selectivity are low deposition temperature and low WF
₆
partial pressure.