Rapid Thermal Annealing Process for Titanium-Silicide Contact Formation

Self-aligned refractory-metal-silicide contact has been recognized as one of the keys to realizing the performance capabilities inherent in scaled-down VLSI's. However, there still remain some problems in refining the contact formation process. This paper presents a feasible process utilizing rapid thermal annealing (RTA) for refined TiSi2 contact formation from the standpoint of precise control of self-alignment, improvement of the surface/interface morphology and assurance of low-resistivity contacts to shallow junctions.