The Thermal Accumulated Improvement of a-Si:H Flexible Electronics for AMOLED Application

We propose several kinds of materials which have different thermal conductivity be the thermal conduction layers between the buffer oxide and substrate of a-Si:H TFT device. The thermal conduction layers, such as Cu, Al, Mo and Si
₃
N
₄
, have significant improvement for thermal accumulation during operation. To understand the transient thermal profile and temperature distribution, we performed by solving the temperature distribution and heat diffusion for a 2-D a-Si:H TFT model to avoid high temperature to damage the PI substrate for flexible electronics operation.