Advances in Gallium Nitride-based Electronics

The III -nitrides AIN, GaN, InN and their alloys are a novel family of semiconductor materials for optoelectronics as well as for electronics. GaN-based high electron mobility transistors (HEMTs) have shown superior power density and operating temperatures at frequency ranges that are beyond the limits of devices fabricated from Si and other III-V materials. This paper presents the advances in the GaN HEMT technology.