Single poly EEPROM with N-well and stacked MIM capacitor for control gate

The new structure of EEPROM is proposed for an excellent programming characteristic with a small cell-size. The capacitor of EEPROM is composed of a stacked MIM (Metal-Insulator-Metal) and n-well. A split-type floating gate is connected to these two capacitors in a single poly EEPROM. The TCAD simulation shows that the programming speed is controlled within 10
^-4
sec. at coupling ratio of 0.75 and control gate voltage of 4 V. We obtain the threshold voltage shifts of 3.2 V between program and erase states.