Monolithic growth of InAs-QDs with different absorption wavelengths in different areas for integrated optical devices

We have developed a technique for selective-area-growth (SAG) of InAs quantum dots (QDs) having different absorption wavelengths, with the goal of using them in all-optical integrated devices. This technique, using the metal-mask method and the insertion of a strain-reducing-layer, provides successful SAG of QDs absorbing at different wavelengths in different areas. This SAG technique is promising for various QD applications as well as our proposed photonic-crystal-based all optical switch (PC-SMZ) and digital flip-flop device (PC-FF).