Silicon Superlattice on SOI for High Mobility and Reduced Leakage

In this paper, simultaneous NMOS drive current enhancement and gate leakage reduction via a novel silicon superlattice on SOI high mobility channel replacement layer is demonstrated. The technology, which is termed MST-SOI, has demonstrated in excess of 20% mobility enhancement, up to 30% drive current enhancement and significant gate leakage reduction compared to a baseline SOI process.