Enhanced Brightness of Tapered Laser Diodes Based on an Asymmetric Epitaxial Design

A significant enhancement of the brightness is predicted in tapered lasers with the active layer asymmetrically located in the optical cavity. The balance between the reduced tendency to beam filamentation, the increase of threshold current, and the decrease of secondary mode discrimination is analyzed using numerical simulations. An optimized design for a 975-nm tapered laser is proposed.