Identification of Shallow Acceptors in Epitaxial GaN:Si

Shallow acceptors in doping epitaxial layers GaN:Si has been studied. A doping concentration was specified by temperature of Si-dopant source (T
_Si
). The chemical nature of the acceptors has been determinated by photoluminescence (PL) method. It is shown that a dominant acceptors in GaN:Si are background impurity Mg at T
_Si
<1350degC and Si on N state at T
_Si
=1400degC.