Temperature Stable Conductivity in Electron Irradiated and Annealed FZ Silicon

In present work constituted results observed of temperature stable conductivity by anneals in range 200~300degC of FZ silicon with point radiation defects. The computations and analysis on influence type and concentration of defects with deep level on temperature stable conductivity was fulfilled. Shown that basis defects are explaining temperature stable of conductivity is divacancy (V
₂
) and divacancy-oxygen complexes (V
₂
O). The comparative analysis from test information showed that increase V
₂
O concentration was not only tied change V
₂
concentration by anneals in temperature range 200~300degC.