Sub-30-nm PMOSFET using Gas Cluster Ion Beam Boron Doping for 45-nm node CMOS and beyond

Formation of ultra shallow junctions (USJ) with sufficiently low resistance in the source/drain extension (SDE) region is necessary for MOSFETs at the 45-nm node and beyond. Several doping technologies, such as plamsa doping, cluster ion implantation and gas cluster ion beam (GCIB) doping have been studied as possible replacements for conventional sub-keV ion implantation. In this work we used GCIB boron doping to form the SDE and have demonstrated the importance of controlling the removal process of photo resist (PR). Additionally to previous work, advantages of GCIB doping with an optimized fabrication process compared to low energy ion implantation are reported.