Tunnelling Anisotropic MagnetoResistance (TAMR)

This paper reports on the the discovery of a novel magnetoresistance called tunnelling anisotropic magnetoresistance (TAMR), which may be harnessed for device applications as both volatile and non-volatile memory. TAMR arises when tunnelling into a material with large spin orbit coupling and magnetic anisotropy such as the ferromagnetic semiconductor (Ga,Mn)As. It results from the strong coupling between the holes and the Mn system, which translates the magnetic anisotropy into an anisotropy in the transport density of states (DOS). This effect was first observed in a Au/AlO
_x
/(Ga,Mn)As tunnel structure.