Faster ESD device characterization with wafer-level HBM

HBM testers are tools for ESD product qualification whereas TLP testers are used for device characterization. The ability to extract TLP-like IV curves from an HBM system is demonstrated in this paper. Together with measurement results on wafer-level, the full methodology is presented and compared to standard 100 ns TLP measurements. The advantage of this methodology is that the quasi-static characteristic of a ESD protection device can be obtained much faster and with only one test procedure.