High-Temperature Stable HfLaON p-MOSFETs With High-Work-Function $\hbox{Ir}_{3}\hbox{Si}$ Gate

We report a novel 1000 $^{\circ}\hbox{C}$ stable HfLaON p-MOSFET with $\hbox{Ir}_{3}\hbox{Si}$ gate. Low leakage current of $\hbox{1.8}\times \hbox{10}^{-5}\ \hbox{A/cm}^{2}$ at 1 V above flat-band voltage, good effective work function of 5.08 eV, and high mobility of 84 $\hbox{cm}^{2}/\hbox{V} \cdot \hbox{s}$ are simultaneously obtained at 1.6 nm equivalent oxide thickness. This gate-first p-MOSFET process with self-aligned ion implant and 1000 $^{\circ}\hbox{C}$ rapid thermal annealing is fully compatible to current very large scale integration fabrication lines.