Above IC RF MEMS and BAW filters: fact or fiction?

In the above IC integration, components are directly built monolithically upon or within the chip itself. The paper describes the works relative to bulk acoustic wave filter and RF MEMS (micro-switch and electromechanical resonator). The paper demonstrates the feasibility of a fully-integrated RF front-end using above-IC BAW integration technique for W-CDMA applications. A MEMS micro-switch, processed on top of a standard BiCMOS wafer including the driver, is also reported here. Finally, the paper presents a new low voltage micromechanical resonator based on suspended-gate MOSFET operating at 16 MHz which have a great potential for CMOS co-integrated reference oscillator applications