Advanced Ni-based Fully SIlicidation (FUSI) technology for sub-45nm CMOS devices

The authors present a study on the advanced Ni-based fully silicidation (FUSI) technology, which could satisfy various technology requirements of sub-45nm CMOS node, from the device Vt point of view. For n-FETs, adding Yb to Ni FUSI allows for tuning the work function (WF) from midgap (NiSi ~4.72eV) to near n-type band-edge (~4.22eV) on thin SiON. On the pFET, we study the effect of Al and Pt on Ni-rich FUSI and integrate it with a SiGe-channel. The authors also report on the use of a Ni fully germano-silicide (FUGESI) as a metal gate in pFETs.