Performance of a high-resolution contact-type linear image sensor with a-Si:H/a-SiC:H heterojunction photodiodes

A 400 DPI (dots-per-inch) contact-type linear image sensor with a scanning speed of 2 ms/line using amorphous silicon photodiodes and poly-Si thin-film transistor drivers has been developed. The characteristics of the heterojunction photodiodes are discussed, and the results of sensor performance tests are examined in terms of output signal uniformity, photoresponse lag, spectral response, gray scale, and the reliability of the 400 DPI image sensor.<
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