Termination Optimization for 4H-Sic p-i-n Diodes

As shown by the progresses made in recent years, SiC is an excellent semiconductor material for high frequency-high power applications. Devices required to operate at high voltage levels face the problem of high peak electric field in the vicinity of the junction edge due to electric field lines crowding. This paper is concerned with the termination optimization by 2D simulation of 4H-SiC diodes for microwave applications. For simulation purpose a comprehensive device model was setup. A limitation due to the targeted application is that the device area should not exceed 160mum. Two versions of the modified junction termination extension (MJTE) have been envisaged for the optimization of the reverse characteristics of the p-i-n diodes. The influence of the MJTE parameters on the breakdown voltage of the structure was studied