Investigation of the characteristics of new HBT's under large signal excitation

In this paper, HBT (Heterojunction Bipolar Transistor) gain measurements under large signal excitation at 14 and 28 GHz are reported. The measurement system uses active loads in order to obtain experimental results over the entire Smith chart. Fine and repeatable variation of the loading is achieved. High power transistors with low impedances are readily measured. The system presently covers the 2-18 GHz and 26.4-40 GHz frequency bands.<
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