Ultra-thin Gate Dielectric Plasma Charging Damage in SOI Technology

It was previously demonstrated that SOI MOSFET devices are more robust with respect to plasma process charging damage than bulk MOSFET devices. In this work, charging damage to the gate dielectric of an SOI device is induced by attaching different-area interconnect antennas to the gate and the diffusion nodes, and/or by attaching identically configured, but widely separated antennas to the nodes