A novel salicide process (SEDAM) for sub-quarter micron CMOS devices

A new salicide process, featuring selective silicon deposition and subsequent pre-amorphization (SEDAM), has been developed for sub-quarter micron CMOS devices. Non-doped silicon films were selectively deposited on gate and source/drain regions to avoid silicidation suppression due to heavily-doped As. Furthermore, silicidation was enhanced by pre-amorphization on the narrow gate and source/drain regions. TiSi/sub 2/ films, with a sheet resistance of /spl les/10 /spl Omega/sq., were stably and uniformly formed on all n/sup +/- and p/sup +/-poly-Si and source/drain diffusion layers for 0.15 /spl mu/m CMOS devices without degradation in the I-V characteristics.<
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