A 0.29-/spl mu/m/sup 2/ MIM-CROWN cell and process technologies for 1-gigabit DRAMs

In keeping with the trend of reducing DRAM cell area, with a target for 1-gigabit DRAMs of less than 0.3 /spl mu/m/sup 2/, the authors have developed a 0.29-/spl mu/m/sup 2/ metal/insulator/metal crown-shaped capacitor (MIM-CROWN) cell with low height by using 0.16-/spl mu/m process technologies.<
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