Frequency-resolved measurements for the characterization of MOSFET parameters at low longitudinal field

A new technique is presented to extract the main parameters required for transistor modeling at low longitudinal fields (parasitic resistance, intrinsic conductivity factor, threshold voltage, and body factor k) from a single MOSFET. The method makes use of easy-to-perform AC frequency-resolved measurements to overcome repeatability and accuracy problems encountered with DC data. The technique has been satisfactorily validated on MOSFET's down to 0.8 /spl mu/m channel length.<
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