One-chip GaAs monolithic frequency converter operable to 4 GHz

The frequency converter combines a feedback amplifier, a differential amplifier, a double-balanced mixer, a voltage-controlled oscillator, and an IF amplifier on a 1-mm/sup 2/ GaAs chip. The FET circuits were matched by digital IC design rather than by the distributed element network technique, to use the substrate more effectively. Self-aligned WSi/Au gates 1.5 mu m long were used, and the resistance in conventional WSi gates was reduced to enhance microwave characteristics. At 4 GHz, the conversion gain is 18 dB, the double-sideband noise is 11.8 dB and the output power is 5.6 dBm.<
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