Impact of drain profiles on Ti-salicided pMOSFET characteristics analyzed by a first comprehensive coupled process/device simulator for salicided MOSFETs

This paper reports a two-dimensional coupled process/device simulation of salicided MOSFETs for the first time. Process simulation results are in good agreement with the experiments. The device structure by the process simulation is precisely reflected to device simulation. Nonlinear current-voltage characteristics at the silicide/Si interface is included in the analysis and show good agreement with the experiments. Impact of a drain profile on a current distribution of Ti-salicided pMOSFETs is discussed.<
>