Analysis of hybrid-mode operation of SOI MOSFETs

In this paper, the characteristics of n-channel SOI MOSFETs in MOS and hybrid-modes of operation are simulated using standard MOS I-V equations. It is shown that the enhancement in drain current in the threshold region is only due to the reduction of the MOS threshold voltage by the applied positive body bias. Only for body voltages higher than 2/spl phi//sub P/ does the BJT contribution to the drain current become significant.<
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