Fabrication of In/sub 0.25/Ga/sub 0.75/As/InGaAsP strained SQW lasers on In/sub 0.05/Ga/sub 0.95/As ternary substrate

A uniform In/sub 0.05/Ga/sub 0.95/As ternary substrate was grown by using liquid encapsulated Czochralski (LEC) technique with a method of supplying GaAs source material at a constant temperature, and InGaAs/InGaAsP strained single quantum well (SQW) lasers were fabricated on the substrate for the first time. The lasers lased at 1.03 μm and exhibited low threshold current density of 222 A/cm
²
and excellent characteristic temperature of 221 K, showing that the ternary substrate has a sufficient quality for laser fabrication.