Enhancement of data retention time for giga-bit DRAMs using SIMOX technology

Both N-type and P-type stacked capacitor DRAM cells (L/sub g/=0.4 /spl mu/m) were fabricated on ultra-thin SIMOX substrates, and the data retention time was compared with that of a bulk counterpart. A data retention time of 550 sec (at 25/spl deg/C) could be achieves using ultra-thin SIMOX substrates, which is 6 times longer than that of the bulk memory cell. Specifically it is demonstrated that a P-type stacked capacitor cell on an ultrathin SIMOX substrate is very attractive and promising for future giga-bit DRAM cells.<
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