Analysis of the time-dependent turn-on mechanism for single-event burnout of n-channel power MOSFETs

For the first time, this paper investigates the time-dependent mechanisms involved in single-event burnout (SEB). SEB of power metal-oxide-semiconductor field-effect transistors (MOSFETs)is a catastrophic failure mechanism initiated by the passage of a heavy ion through the device structure. In previous work, analytical models have been developed to explain the regenerative feedback mechanism that induces second breakdown of the parasitic bipolar junction transistor (BJT). In this paper, a first order dynamic model is presented to lend insight into the turn-on of the parasitic BJT by the heavy ion.<
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