Small-signal resonance distortion of semiconductor lasers

Small-signal expressions for the second- and third-order resonance distortion of a semiconductor injection laser are reported. Results are valid even if the frequencies involved are not closely spaced, and are applicable to high-power lasers for which previously published results may not be valid. The new results are more accurate than prior results when the product of the gain compression factor and the photon density is relatively large, or when low frequencies are of interest. The second-order distortion-to-carrier ratio depends on the resultant frequency but not on the individual frequencies involved in nonlinear mixing. The third-order distortion-to-carrier ratio in general depends on individual mixing frequencies, but if all frequencies are small compared to the resonance frequency, then this result also depends primarily on the resultant frequency.<
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