MOVPE growth of strained InAsP/InGaAsP quantum-well structures for low-threshold 1.3-/spl mu/m lasers

Device-quality strained InAsP/InGaAsP multiple-quantum-well (MQW) structures are successfully grown using the low-pressure metalorganic vapor phase epitaxy method. The grown MQW structures are characterized using X-ray, photoluminescence, and photocurrent measurements that confirm that their structural and optical qualities are high enough for practical device applications, as well as that the InAsP/InGaAsP heterostructures have a large conduction-band offset. The grown wafers are processed into 40-/spl mu/m-wide stripe-ridge waveguide lasers. Threshold current densities as low as 88 A/cm/sup 2/ are achieved for a graded-index separate-confinement heterostructure (GRIN-SCH) single-quantum-well laser diode. Buried heterostructure laser diodes fabricated from GRIN-SCH 4-well strained MQW wafers have threshold currents as low as 1.05 mA at 26/spl deg/C and 7.2 mA at 106/spl deg/C.<
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