Introduction to the special issue on strained-layer optoelectronic materials and devices

Strained layer quantum-well heterostructure semiconductor lasers and other optoelectronic devices are having an impact on nearly all applications of optoelectronics and especially fiber optic telecommunications. In this special issue on strained-layer optoelectronic materials and devices, the most recent advances in this fast-moving area of research are represented by 11 invited papers and 18 contributed papers. The research reported here covers an impressive range from detailed calculations and experimental data on the valence band structure and optical gain of strained layer heterostructures to the laser operating characteristics of devices made from these structures.<
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