Radiation damage of double-sided silicon strip detectors

Effects of radiation damage on a double-sided readout silicon strip detector exposed to 65-MeV protons have been studied. Two types of detectors have been fabricated. The first type has a punch-through bias resistor on a p-n junction side and a narrow accumulation layer resistor on an ohmic-contact side. The second detector has pure resistive bias resistors on both sides. A floating p/sup +/ blocking line between adjacent n/sup +/ strips was used to obtain a good isolation on the ohmic-contact side. The readout coupling capacitors are integrated on both surfaces. It was observed that the strip isolation on both sides was maintained satisfactorily up to 61 kGy. For the first type a significant potential drop between bias ring and each strip was observed. The difference increased with increase of dose considerably on both surfaces. On the other hand, the pure resistive biasing method was very stable up to 40 kGY.<
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