Anomalous behavior of surface leakage currents in heavily doped gated-diodes

Anomalous voltage and doping dependence of surface leakage currents in heavily doped gated diodes is described and explained. By 2-D numerical device simulations, using a recombination model which includes trap-assisted tunneling, a good quantitative description of surface leakage current is obtained. This has resulted in a revision of the conventional description of these currents. Simple design criteria to avoid excessive surface leakage currents are presented.<
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