Modeling the voltage coefficient of linear MOS capacitor

A one-dimensional model for analyzing the voltage coefficient of the linear MOS capacitor is presented. This model takes into account the capacitances and the charge-coupling effect of the polysilicon gate and the underlying substrate in calculating the voltage coefficient of a poly-to-silicon capacitor. The voltage dependences of the polysilicon-gate MOS capacitors are analyzed, modeled, and compared with measured data.<
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