A hybrid silicon carbide differential amplifier for 350 degrees C operation

An operational amplifier has been designed, fabricated, and tested at 350 degrees C using silicon carbide MESFET pairs and thick-film hybrid technology. The amplifier was successfully tested over the temperature range of 25-350 degrees C. The gain of the amplifier was greater than 60 dB, the common-mode rejection ratio was greater than 55 dB, and the offset voltage varied from 139 to 159 mV over the entire temperature range. The results demonstrate the feasibility of high-temperature circuit design and assembly using this approach.<
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