Computer-aided investigation of the turn-off performance of GTO thyristors

A one-dimensional numerical model has been derived for the parametric study of the turn-off performance of gate-turn-off thyristors. This model takes into account all major physical effects and represents the interactions between the inner device charge dynamics and the operation of an external circuit. It is shown that, in spite of the one-dimensional simplification, this model provides an accurate description of GTO turn-off and can be used as a computer aid for circuit design and device selection as well as for device structure design.<
>