Inductive load switching measurements: realistic device evaluation

Most power semiconductor manufacturers can provide performance data for even the most recently introduced device. This data will normally include limiting values for applied voltage, load current and dissipated power, together with selected dynamic switching parameters. As power semiconductors are applied in applications requiring ever higher operating frequencies the correct evaluation of the switching losses becomes of paramount importance. The author illustrates how the inductive load switching performance differs from that observed with a resistive load, and the extent to which the switching loss increases. Particular results are quoted for a 1200 V, 75 A dual, triple-Darlington power transistor module.<
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