Impact ionization and light emission in high-power pseudomorphic AlGaAs/InGaAs HEMTs

Impact ionization and light emission have been studied in pseudomorphic AlGaAs/InGaAs HEMTs characterized by delta doping in the undoped AlGaAs layer and by additional planar doping within the InGaAs channel, and suitable for high-power applications. Impact ionization has been demonstrated to the limiting effect for high V/sub ds/ applications. Emission spectra in the 1.1-2.6 eV range have been analyzed. They show peaks at low energy due to recombination mechanisms and a long tail due to hot electrons.<
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