CO/sub 2/ laser induced photoeffects in silicon junctions

CO/sub 2/-laser-induced photovoltaic and photoconductive effects have been studied experimentally in silicon junctions. The response is slightly nonlinear or linear for the lower excitation intensities used, in opposition to the extremely nonlinear high-excitation-intensity regime. Abrupt changes in the slope of the growing response in the induced voltage pulsewidth and in the dependence on the junction temperature cause the difference in behavior. While the high-excitation-intensity response is strongly temperature dependent, the low excitation response is practically independent of the temperature.<
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