Thermal neutron detection using Si detector and a boron implanted polyethylene converter

The development of semiconductor detector technology has led the authors to consider real time dosimetry. The study concerns the thermal neutron detection through (n, alpha ) reaction on boron 10, with recording of secondary particles ( alpha , /sup 7/Li) by a PIPS detector (passivated implanted Si detector). The authors compared theoretical estimates with experimental results from irradiations in CEN Cadarache. This results are given as the number of registered pulses per milliSievert per square centimeter.<
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