Radiation effects on CCD

Silicon Charge Couple Devices are the main components for visible and infrared imaging. The behaviour of these components has been studied under photon radiations (total dose and dose rate radiations) and neutron radiation. Infrared readout circuits have been tested in storage condition at 300 K and in operating condition at 77 K. The different simulation facilities, test facilities and main results are presented. This evaluation is the first step to hardening.<
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