Analysis on FM efficiency of InGaAs/InGaAsP SCH-MQW LD's taking injection carrier transport into account

FM efficiencies of InGaAs/InGaAsP separate-confinement-heterostructure multiple-quantum-well laser diodes (SCH-MQW LDs) were theoretically analyzed taking carrier transport in the SCH layer into account. It was found that injection carrier transport from the SCH layers to the wells plays an important role in the FM response, due to a finite carrier capture time. The calculated values for FM efficiency were in excellent agreement with measured values for LDs with different SCH layer thicknesses, which indicates that a thick SCH layer is desirable for high FM efficiency operation.<
>