In/sub 0.53/Ga/sub 0.47/As-InP multiple quantum well layers disordered by impurity diffusion with sulphur or zinc and by proton bombardment

The intermixing of solid source MBE grown In/sub 0.53/Ga/sub 0.47/ As-InP MQW layers has been investigated by impurity diffusion induced disordering (IDID) using zinc or sulphur as impurities and by impurity implantation induced disordering (IIID) using protons as the implant. A single mode waveguide operating at 1.52 mu m was fabricated by sulphur IDID.<
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