A novel strained quantum well laser emitting at 1.5 mu m

The authors have grown a laser structure based on a In/sub x/Ga/sub 1-x/As/In/sub y/Ga/sub 1-y/As strained layer superlattice active region which emits at approximately 1.55 mu m. An active region thickness of 44 nm gave the lowest threshold current density, J/sub th/. This value of J/sub th/ is over an order of magnitude better than would have been obtained using a similar InGaAsP active layer thickness. This reduction in J/sub th/ for this thickness of active layer must be due to a reduction in the Auger processes. The high efficiency observed implies a reduction in optical losses. The lasers are considered for long haul telecommunications.<
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